Innovation and application of passive device technology in backbone network OTN/WDM solutions
Innovation and application of passive device technology in backbone network OTN/WDM solutions
With the rapid development of 5G, cloud computing, and other technologies, the demand for ultra-large
bandwidth, low latency, and flexible scheduling in backbone networks has surged.
OTN/WDM technology has
become the core bearing solution of modern backbone networks due to its high capacity, long-distance
transmission and intelligent management capabilities.
As a manufacturer of fiber optic passives, we provide key
foundational components for OTN/WDM systems through technological innovation,
helping to build efficient and reliable transmission networks.
OTN/WDM architecture is integrated with passive devices
The backbone OTN/WDM system adopts a hierarchical architecture (optical channel layer OCh,
optical multiplexing segment layer OMS, optical transmission segment layer OTSL),
in which passive devices play an irreplaceable role in optical layer signal processing: WDM
It supports DWDM/CWDM technology to achieve transmission of more than 96 waves per fiber (channel spacing).
can be customized by 0.8 nm/20 nm and achieves insertion loss of <0.3 dB
and wavelength isolation > 35dB through a precision optical coating process.
Optical isolator
Faraday rotating magneto-optical crystal technology is used to achieve a > 40 dB reverse isolation degree,
effectively preventing reflection damage from EDFA and other active devices.
Optical Splitter
The 1×N spectroscopy ratio accuracy is ±0.5dB, and it supports wavelength-independent spectroscopy,
making it suitable for optical power monitoring and service protection switching scenarios.
2 Technological breakthroughs in passive devices
In response to the ultra-long-distance transmission needs of backbone networks, our products have achieved breakthroughs in the following areas:
Anti-nonlinear design: By optimizing the radius of curvature of the fiber end-face microlens (<5 μm), the four-wave
The mixing effect in high-power scenarios is reduced, and 400G QPSK/16QAM modulated signal transmission is supported.
Wide temperature stability:
The operating temperature range is extended to -40°C~85°C to meet the deployment needs of field optical relay stations.
Intelligent integration: Develop hybrid passive devices (such as WDM + isolator + beam splitter 3-in-1 module) to
Reduce the size by 60% and adapt to the high-density deployment of OXC all-optical switching equipment.
3. The overall solution advantages brought by technological innovation
These passive innovations directly enable the next generation of OTN/WDM backbone solutions:
Ultra-high speed and large capacity:
The wide application of C+L band systems makes the single fiber capacity easily exceed 40 Tb/s.
Low-loss, high-performance MUX/DeMUX and WSS are the physical foundation that underpins this capacity.
Flexibility and intelligence:
The maturity of WSS and tunable devices has changed the network from a "static pipeline" to a "flexible mesh."
SDN controllers can control WSS to create, adjust, or remove optical channels on demand in real time, achieving "on-the-go" bandwidth.
High reliability:
High-performance passive devices (e.g., optical switches, WSS) enable fast and lossless optical layers.
protection switching, providing a more efficient and lower latency recovery method than electric layer protection.
Low power consumption and low cost:
Device integration reduces fiber splice junctions and independent packages.
reducing insertion loss and power consumption. Automated production and miniaturization reduce the cost of a
single device, which in turn reduces the construction and operation and maintenance costs of the entire system.
Use Cases:
The 96-wave DWDM+OTN electrical crossover scheme is used to deploy high-density optical fiber ring (IL<1.2dB)
and a dimmable optical attenuator (adjustment accuracy ±0.1 dB) to achieve 200G service bearing across 4000 km across provinces.
Data Center Interconnect (DCI):
Build an all-optical mesh network with silicon-based hybrid integrated devices.
supporting 1.6 Pbps switching capacity in a single rack and reducing power consumption by 45%.
